Hard Mask of Amorphous Carbon for Lithographic Application

碩士 === 明新科技大學 === 化學工程研究所 === 99 === As the CD patterning size scaled down to sub-100nm device node, the new technologies and materials such as etching hard mask and Anti-Reflective Coating (ARC) become more important. The manufacture of pattern definition by lithography and etching, the new materia...

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Bibliographic Details
Main Author: 林姿廷
Other Authors: 陳瑞堂
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/54570692206042033176