The Fabrication and Electrical Characterization of MOS Capacitors Using Si- and Zr-doped CeO2 as the High-k Gate Dielectrics
碩士 === 明志科技大學 === 材料工程研究所 === 98 === In this work, metal-oxide-semiconductor (MOS) capacitors with a high-k cerium zirconate (CeZrO4) and cerium silicon (CeSiO4) as the gate dielectrics have been fabricated. High-k CeZrO4 and CeSiO4 were fabricated by using CeO2 and zirconate and silicon targets dur...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17792725341443933892 |