Silicidation reaction of Ni-P thin films on Si(100) substrates
碩士 === 國立中興大學 === 材料科學與工程學系所 === 98 === With the increasing miniaturization of the dimensions of integrated devices, Ni-silicide is a promising material for complementary metal-oxide-semiconductor (CMOS) devices because NiSi has a low resistivity, line-width-independent sheet resistance and low sili...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/83528476822891769271 |