Silicidation reaction of Ni-P thin films on Si(100) substrates
碩士 === 國立中興大學 === 材料科學與工程學系所 === 98 === With the increasing miniaturization of the dimensions of integrated devices, Ni-silicide is a promising material for complementary metal-oxide-semiconductor (CMOS) devices because NiSi has a low resistivity, line-width-independent sheet resistance and low sili...
Main Authors: | Hsun-Yang Chan, 詹巽揚 |
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Other Authors: | Hsun-Feng Hsu |
Format: | Others |
Language: | zh-TW |
Online Access: | http://ndltd.ncl.edu.tw/handle/83528476822891769271 |
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