Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
碩士 === 國立中興大學 === 物理學系所 === 98 === Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-indium (TMIn) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05128518673440907309 |