Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition

碩士 === 國立中興大學 === 物理學系所 === 98 === Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-indium (TMIn) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown...

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Main Authors:	Chi-Ying, Hsiao, 蕭琦穎
Other Authors:	Jyh-Rong Gong
Format:	Others
Language:	zh-TW
Published:	2010
Online Access:	http://ndltd.ncl.edu.tw/handle/05128518673440907309

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spelling	ndltd-TW-098NCHU51980212016-11-06T04:19:07Z http://ndltd.ncl.edu.tw/handle/05128518673440907309 Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition 以原子層沉積法生長銦摻雜氧化鋅膜於(11-20)面氧化鋁基板之特性研究 Chi-Ying, Hsiao 蕭琦穎碩士國立中興大學物理學系所 98 Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-indium (TMIn) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission spectroscopy, x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), and Hall measurements. The atomic percentages and chemical states of ALD-grown IZO films were also analyzed by x-ray photoelectron spectroscopy (XPS). It was found that In-doping tended to enhance conductivity and transmittance of the IZO film. Under certain conditions, ALD-grown IZO films exhibit more than 90% optical transmittance in the visible spectra with resistivities being in the range of high 10^-4 Ω-cm. Jyh-Rong Gong 龔志榮 2010 學位論文 ; thesis 77 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立中興大學 === 物理學系所 === 98 === Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-indium (TMIn) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown IZO films were characterized by optical transmission spectroscopy, x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), and Hall measurements. The atomic percentages and chemical states of ALD-grown IZO films were also analyzed by x-ray photoelectron spectroscopy (XPS). It was found that In-doping tended to enhance conductivity and transmittance of the IZO film. Under certain conditions, ALD-grown IZO films exhibit more than 90% optical transmittance in the visible spectra with resistivities being in the range of high 10^-4 Ω-cm.
author2	Jyh-Rong Gong
author_facet	Jyh-Rong Gong Chi-Ying, Hsiao 蕭琦穎
author	Chi-Ying, Hsiao 蕭琦穎
spellingShingle	Chi-Ying, Hsiao 蕭琦穎 Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
author_sort	Chi-Ying, Hsiao
title	Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
title_short	Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
title_full	Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
title_fullStr	Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
title_full_unstemmed	Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition
title_sort	growth and characterization of in-doped zno films on (11-20) sapphire substrates using atomic layer deposition
publishDate	2010
url	http://ndltd.ncl.edu.tw/handle/05128518673440907309
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Growth and characterization of In-doped ZnO films on (11-20) sapphire substrates using atomic layer deposition

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