Structural analyses of the dislocations in ZnO films grown on (11-20) or (0001) sapphire substrates
碩士 === 國立中興大學 === 物理學系所 === 98 === Characteristics of dislocations in wurtzite ZnO films deposited on (11-20) or (0001) sapphire substrates were investigated in this study. ZnO films were prepared by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O), and some of them hav...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28907050610834498344 |
| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 98 === Characteristics of dislocations in wurtzite ZnO films deposited on (11-20) or (0001) sapphire substrates were investigated in this study. ZnO films were prepared by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O), and some of them having low temperature ZnO buffer layers which were thermally annealed. ZnO samples were analysed by transmission electron microscopy (TEM) and x-ray diffraction (XRD). TEM observations using g‧b = 0 invisibility criterion exhibit the distribution of various types of dislocations in ZnO film. High-resolution TEM (HRTEM) observations show lattice images with partial dislocations and stacking faults near the ZnO/sapphire hetero-interface. A buffer-layer annealing treatment was found to enable reduction of dislocation density along with improvement in the crystalline property of a ZnO film.
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