Summary: | 碩士 === 國立中興大學 === 物理學系所 === 98 === Aluminum-doped zinc oxide (AZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-aluminum (TMAl) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown AZO films were characterized by optical transmission spectroscopy, x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), and Hall measurements. Under certain conditions, Al-doping tended to enhance conductivity and transmittance of the AZO film.
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