Characteristics of Al-doped ZnO films grown on (11-20) sapphire substrates using atomic layer deposition

Characteristics of Al-doped ZnO films grown on (11-20) sapphire substrates using atomic layer deposition

碩士 === 國立中興大學 === 物理學系所 === 98 === Aluminum-doped zinc oxide (AZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-aluminum (TMAl) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-g...

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Bibliographic Details
Main Authors: Jyun-Syong Yang, 楊竣雄
Other Authors: J.R. Gong
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/68301220973511470263
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Summary:碩士 === 國立中興大學 === 物理學系所 === 98 === Aluminum-doped zinc oxide (AZO) films were deposited on (11-20) sapphire substrates at 300°C by atomic layer deposition (ALD) using diethyl-zinc (DEZn),trimethyl-aluminum (TMAl) and nitrous oxide (N2O). The optical, structural and conductive properties of the ALD-grown AZO films were characterized by optical transmission spectroscopy, x-ray diffractometry (XRD), field-emission scanning electron microscopy (FESEM), and Hall measurements. Under certain conditions, Al-doping tended to enhance conductivity and transmittance of the AZO film.

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