A TCAD Simulation Study for Advanced Nanoscale CMOS Devices
博士 === 國立中興大學 === 電機工程學系所 === 98 === In this dissertation, an effect of subband structure and mobility for CMOS was firstly studied. For an NMOS used by uniaxial stress, the author was interested an effect of stress distortion on the conduction band structure derived by k.p method. From k.p conduc...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02461879874916890203 |