Effect of carbon film and gallium film on the gas sensing characteristics of Ga2O3 thin film gas sensor prepared by rheotaxial growth and thermal oxidation
碩士 === 國立成功大學 === 化學工程學系碩博士班 === 98 === Gallium oxide possesses the property of the semiconductor which is stable at high temperature, and has been applied in detecting reducing gas recently. In this study, a layer of Carbon/Gallium was deposited on top of Ga2O3 film (C/Ga2O3 and Ga/Ga2O3) or a laye...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2010
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Online Access: | http://ndltd.ncl.edu.tw/handle/11365678114535165713 |