Study of T-Gate HEMTs by Selective Etching
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === In this work, we succeed in reducing effective gate length by utilizing HCl selective etching ITO/Au gate, and hence improve devices performance. Because of the high selectivity of HCl to ITO and Au and the low etching rate to GaAs, we choose these mater...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/00380102152326550289 |