Investigation of Strain-Compensated GaAsSb and InGaAs Long Wavelength Lasers and Photodetectors Grown by MOVPE
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === The main purpose of the dissertation is to investigate the MOVPE growth of long wavelength lasers and photodetectors. In the laser devices, the GaAsSb/GaAs and InGaAs/GaAs QWs were used as the active medium. The strain-compensated structure was also used to...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54662276232397602859 |