Fabrication and Analysis of InGaAsN-based Solar Cells Grown by MOVPE
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === The main purpose of this thesis is to investigate the dilute-nitride alloys and develop the InGaAsN materials lattice-matched to GaAs or Ge with near 1 eV bandgap for the use as a third-junction in the next generation of ultrahigh-efficiency four-junction...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/53047005071629095222 |