Investigation of -V Compound Semiconductor High Electron Mobility Field-Effect Transistors
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === In this dissertation, three different GaAs-based high electron mobility field-effect transistors, grown by a metal organic chemical vapor deposition (MOCVD) and a molecular beam epitaxy (MBE) system, are fabricated and studied. Through the newly designed str...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/97069949058284734925 |