Using Liquid Phase Oxidized InGaP and GaAs as Gate Insulators for InGaP/InGaAs Metal-Oxide-Semiconductor Pseudomorphic High Electron Mobility Transistors Applications
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 98 === We demonstrate the use of native GaAs and InGaP oxides as gate insulators in the fabrication of InGaP/InGaAs pseudomorphic high electron mobility transistors (pHEMTs) that are characterized through the liquid phase oxidation (LPO) method. The liquid phase ox...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09541853425182167828 |