Fabrication and Analysis of Indium Gallium Zinc Oxide Transparent Thin Film Transistors
碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === In this thesis, amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) with different kinds of dielectric layers were fabricated and investigated. In the first part of our experiments, 100 nm and 200 nm Ta2O5 and 200 nm SiO2 thin films were...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26097661080753128732 |