Characterization of InGaN/GaN MQW LEDs with Single Sub-Micro Meter Scale Fabricated by Focused Ion Beam
碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === In this essay, dual-beam focused ion beam system (DB-FIB) was used to finish dry etching process on the GaN-based LED devices which were growth on c-plane sapphire substrate by metal-organic chemical vapor deposition (MOCVD). By using this technique, we have f...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14569631459079527430 |