Highly Sensitivity AlGaN/GaN HEMTs Sensorsusing lock-in amplification technique
碩士 === 國立成功大學 === 光電科學與工程研究所 === 98 === Abstract In this dissertation, applications of AlGaN/GaN high-electron-mobility transistors (HEMTs) as chemical sensors are investigated. The drain-source current is very sensitive to the chemical environment of the exposed gate region for a gateless HEMT....
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45430885461911181545 |