Selective-area Regrowth Technique Applied to GaN-Based Optoelectronic Devices Grown by Metalorganic Vapor Phase Epitaxy
博士 === 國立成功大學 === 光電科學與工程研究所 === 98 === In this dissertation, selective-area grown (SAG) techniques performed by metalorganic vapor phase epitaxy (MOVPE) have been demonstrated to grow GaN-based light emitting diodes (LEDs) and AlGaN-based photodiodes (PDs). The SAG GaN and AlxGa1-xN epitaxial layer...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58380002596176621040 |