Design of capacitive micro tilt sensor in standard CMOS-MEMS process

• Main Authors: Jia-Hao Bai, 白家豪
• Other Authors: Meng-Lieh Sheu
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/96092945479976092308

碩士 === 國立暨南國際大學 === 電機工程學系 === 98 === Tilt sensor is a common measurement tool used in construction, aerospace, machinery, semiconductor, chemical and biomedical engineering and a variety of applications. However, the general tilt sensors used in engineering are not suitable for use in portable products, and therefore the small size tilt sensor is needed. In this paper, a simple, durable and low-cost capacitive micro-channel tilt sensor in CMOS-MEMS is proposed. A micro-channel capacitor on CMOS chip to sense the level through the capacitive change caused by fluid flow to sensing the level, and the readout circuit to construct a capacitive micro tilt sensor is implemented in TSMC 0.35μm CMOS-MEMS technology provided by National Chip Implementation Center. The chip area is 1400μm × 1500μm. The chip works at 3.3V power supply and operates at 100KHz clock rate. Capacitance value from 20fF to 200fF can be sensed, corresponding analog output voltage is from 2.18V to 0.84V. The overall power consumption is 0.13mW.