Growth of GaN-based LED on Patterned Sapphire Substrate
碩士 === 國立交通大學 === 材料科學與工程系所 === 98 === This study is to improve the design of patterned sapphire substrate. Using the wet-etching technique , it will minimize c-plane area which is the top of pyramid and the shape of pyramid is variable spires from the flattened. In the GaN epitaxial growth, threadi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/52531027173315165888 |