DC and RF Performance Improvement of 60 nm InAs Quantum Well Field Effect Transistors by Self-alinged Gate Technology
碩士 === 國立交通大學 === 材料科學與工程系所 === 98 === In general, III-V compound semiconductors have significantly higher intrinsic mobility than silicon and substrates are semi-insulating. These material properties combine with band gap engineering, epitaxial layer growth technique and process technologies result...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13616380524178213288 |