Interface morphologic and electrical characteristic of bonded n-Si/n-GaAs
碩士 === 國立交通大學 === 材料科學與工程系所 === 98 === The integration of III–V optical devices and Silicon attract much interest for OEICs applications. Wafer bonding can provide high quality interface for combination of these materials. During high pressure and high temperature anneal, wafer bonded by producing c...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/55810986502713481713 |