Epitaxial Growth of GaN on Si Substrate by Low Pressure Metal-Organic Chemical Vapor Deposition
博士 === 國立交通大學 === 材料科學與工程學系 === 98 === In this thesis, the heterostructure growth of GaN on Si substrate by Low-pressure metal-organic chemical vapor deposition (LP-MOCVD) is studied. The investigation focuses on the growth of GaN on 6 “ Si (111) wafer. There different approaches werw including in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/29335275026284465590 |