The Study of HfO2 dielectric by CF4 plasma treatment for OTFT application

• Main Authors: Tseng, Yi-Wen, 曾憶雯
• Other Authors: Chang, Kow-Ming
• Format: Others
• Language: en_US
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/02133172920667397324

碩士 === 國立交通大學 === 電子工程系所 === 98 === The advantage of E-Gun Evaporation System is that we can control the process temperature to be under 200 ℃, and that is suitable for the application of flexible electronic process. The thin films are loose and defective if they are not annealing with high temperature, so usually we use CF4 plasma display panel to process the thin film. In the research, we use HfO2 as the dielectric layer and successfully reduce the electric leakage by using fluorine to mend the dielectric layer. Because HfO is a high dielectric material (k~24), we can advance the capacitor value to level down the threshold voltage and lower the operation voltage of thin-film transistor to -2V. In comparison with processing with furnace and add N2 in it for one hour, the electronic characteristic of thin film through CF4 plasma treatment is better. The electronic characteristic of thin film through CF4 plasma treatment deposits HMDS for 2 minutes is better than not depositing HMDS.