Design of 2xVDD-tolereant I/O buffer with 1xVDD CMOS devices
碩士 === 國立交通大學 === 電子工程系所 === 98 === With the advance of complementary metal-oxide-semiconductor technology, the gate-oxide of the transistor becomes thinner and the maximum voltage across the gate-oxide including gate-source voltage (Vgs), gate-drain voltage (Vgd) of the MOS transistor has decreased...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/75402082285525160990 |