Analysis of Remote Coulomb Scattering Using Channel Backscattering Theory
碩士 === 國立交通大學 === 電子工程系所 === 98 === Many investigations point out that when the thickness of oxide layer is less than 2~3nm, the effective electron mobility will be degraded with the reduction of gate oxide thickness. It is suggested that the mobility degradation of ultrathin gate oxide devices may...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86222712696045922739 |