Analysis of Remote Coulomb Scattering Using Channel Backscattering Theory
碩士 === 國立交通大學 === 電子工程系所 === 98 === Many investigations point out that when the thickness of oxide layer is less than 2~3nm, the effective electron mobility will be degraded with the reduction of gate oxide thickness. It is suggested that the mobility degradation of ultrathin gate oxide devices may...
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| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/86222712696045922739 |
| Summary: | 碩士 === 國立交通大學 === 電子工程系所 === 98 === Many investigations point out that when the thickness of oxide layer is less than 2~3nm, the effective electron mobility will be degraded with the reduction of gate oxide thickness. It is suggested that the mobility degradation of ultrathin gate oxide devices may be caused by the Coulomb scattering from remote charge in the poly gate. Using the channel backscattering theory and triangular potential approximation simulator TRP, an important parameter mean free path λ can be fitted to the Fischetti’s Monte Carlo data. After fitting the mean-free-path λ from effective electron velocity in the different cases, we can distinguish the fraction of λ caused by the remote charge scattering due to the charge in the depletion region of the poly gate and calculate the remote charge scattering mobility μrcs with λrcs through the backscattering theory. This new method can therefore offer a simple way to estimate Coulomb scattering mobility μrcs; and the results have been corroborated proved through the comparison with the recent experiment date.
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