Study of Resistive Switching Behavior in ErO Thin Film for Resistive Random Access Memory (RRAM)
碩士 === 國立交通大學 === 電子研究所 === 98 === Recently, nonvolatile memories have receive greater attention became of their wide application in electronic systems, the conventional floating gate memories are expected to reach certain technical and physical limit in the near future, and the wealth of researche...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26713446630534773496 |