The Physical Model of the Switching Dynamics in HfO2-based Resistive Random Access Memory
碩士 === 國立交通大學 === 電子研究所 === 98 === Carrier-trapping memory devices (eg., FLASH, SONOS etc.) have several inherent scaling limits, such as random dopant fluctuation, random telegraph noise, and minimum tunnel oxide thickness. In order to solve the problems above, a new type of resistive-changing memo...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/2zbu4q |