The Effects of Hydrogen Treatment on GaN Surface

• Main Authors: Hsu, Ying-Chia, 徐瑩珈
• Other Authors: Lee, Wei-I
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/04992593306376300617

碩士 === 國立交通大學 === 電子物理系所 === 98 === The effects of hydrogen treatment on GaN surface and the etching mechanism are studied in this work. Hydrogen is a kind of gases with the ability to etch GaN, so different GaN surfaces appear under different etching conditions in hydrogen. These surfaces can be used as pattern GaN with the advantages of defect reducing and strain releasing in epitaxy process afterwards. The weaker points on GaN surface are etched by hydrogen first; the hydrogen atoms make the nitrogen atoms in GaN dissociated and Ga atoms left. Judging from the activation energy, the nitrogen atoms generated after GaN dissociation form into nitrogen and desorb from GaN surface.