Optical Properties of InxGa1-xAs1-ySby/InP material
碩士 === 國立交通大學 === 電子物理系所 === 98 === Band gaps and recombination mechanisms in the InxGa1-xAs1-ySby/InP materials are investigated by photoluminescence (PL), photoreflectance (PR), and time-resolved excitation correlation spectroscopy (TREC). First, we study the recombination lifetimes in heavily Be-...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/84437498553497530305 |