The influence of rapid thermal annealing on the electron emission of InAsN/InGaAs dot-in-well structures
碩士 === 國立交通大學 === 電子物理系所 === 98 === The effects of post-growth thermal annealing on optical and electrical properties of InAsN /InGaAs dot-in -well structures grown by molecular beam epitaxy on GaAs(100) were studied by using capacitance-voltage (C-V) profiling, bias-dependent deep level transient...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30211313598792427582 |