Intrinsic Parameter Fluctuation in Nanoscale MOSFET with Vertical Silicon Channels
博士 === 國立交通大學 === 電信工程系所 === 98 === Gate-length scaling is still the most effective way to continue Moore’s Law for transistor density increase and chip performance enhancement. Accompanied with complementary metal-oxide-semiconductor (CMOS) technology advanced to 45-nm node in production, further s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2009
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43962390492786182340 |