Investigation on stability analysis for novel thin-film-transistors with a transparent a-IGZO channel layer
碩士 === 國立交通大學 === 光電工程學系 === 98 === Amorphous oxide semiconductors (AOSs) are attracted much attention due to high mobility, low temperature deposition, flexible,transmission, and uniformity.It has been investigated of AOSs, such as ITO, IZO, TiO2, ZnO, In2O3, Ga2O3, IGO, a-IGZO,etc. Especially,the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/21029337067288683098 |