Self-Mode-Locking Investigation of High-Power Optically Pumped Semiconductor Laser

碩士 === 國立交通大學 === 理學院碩士在職專班應用科技學程 === 98 === The research used high-power laser diode to be a pumping source and mono¬lithic III-V semiconductor chip contains GaAS layers as gain medium to absorb the IR light alternated with InGaAs quantum wells. In the progress, different values of reflection of ou...

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Bibliographic Details
Main Authors: Lee, Yi-Chun, 李易純
Other Authors: Chen, Yung-Fu
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/14845319588105594120