The Characterization and Analysis of Flicker Noise and Random Telegraph Signal for CMOS Nanodevices
碩士 === 國立交通大學 === 理學院碩士在職專班應用科技學程 === 98 === In this thesis, systematic study and characterization of flicker noise for devices from 0.25um to 40nm technology nodes are conducted. For 40nm devices, when poly gate area becomes small, there is some limitation to characterize the device behaviors by qu...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06379773529668592216 |