Improvement of the Si substrate backside exposure problem

碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 98 === The dominate goal of the study is to solve concave problem in wafer backside for some DRAM product. Some serious wafers were scrapped due to damage silicon substrate. The DRAM products with many different type due to often design process flow by diff...

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Bibliographic Details
Main Authors: Chen, Chen-Hsing, 陳振興
Other Authors: Chang, Y. Edward
Format: Others
Language:zh-TW
Published: 2009
Online Access:http://ndltd.ncl.edu.tw/handle/21723195843777528798