Improvement of the Si substrate backside exposure problem

• Main Authors: Chen, Chen-Hsing, 陳振興
• Other Authors: Chang, Y. Edward
• Format: Others
• Language: zh-TW
• Published: 2009
• Online Access: http://ndltd.ncl.edu.tw/handle/21723195843777528798

碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 98 === The dominate goal of the study is to solve concave problem in wafer backside for some DRAM product. Some serious wafers were scrapped due to damage silicon substrate. The DRAM products with many different type due to often design process flow by different critical dimension. The potential problems of design will appear one after another when mass production. According to running history of impact wafers to analysis & find out common issue. Get robot catch wafer position data of relation machine to correlate with impact wafer pattern, try to find out impact machine type & layers by microscope, SEM measurement tool. We change parameter, try to find out the key point & borrow tool from ERSO to measure boat pin roughness to confirm. We found out there are some problem in design process flow, possible induce wafer abnormal even scrap for seriously in the experiment. We provide very important suggestion at process flow designing in semiconductor. To improve wafer yield, get big contribution in company.