| Summary: | 碩士 === 國立交通大學 === 工學院碩士在職專班半導體材料與製程設備組 === 98 === Flip-chip technology has become a mainstream trend in advanced electronic packaging because of its capability of higher I/O density and smaller package size. With higher current and smaller size trends, electromigration in flip-chip solder has become an critical of reliability concern.
Currently, the bump height of solder bumps is about 50~100-um. In this study, we will follow the trend- toward light, thin, short, small and measure the resistance change of solder bumps in the electromigration effect by using the Kevin structure and observe its various stages of electromigration failure modes with the eutectic SnPb solder with 20-um bump height and 5-um thick Cu UBM (under-bump-metallization).
In this study, we measure the resistance change of solder bumps in the electromigration effect by using the Kevin structure and observe their failure modes at various stages of electromigration with the eutectic SnPb solder, which is 20-um bump height and 5-um thick Cu UBM.
We found that the electromigration failure mode in the solder specimens is the dissolution of copper UBM, the growing of IMC layer, the generation of void and the void extending into the rest of the contact open.
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