Characteristics of Silicon Nanowire Devices: Ohmic vs. Schottky Contacts
碩士 === 國立交通大學 === 奈米科技研究所 === 98 === In recent years, a variety of sensors with different sensing mechanisms have been proposed by many research teams to enhance the sensitivity in very low concentration. Modern electronic devices especially nanowire devices possess properties of high surface to vol...
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| Format: | Others |
| Language: | zh-TW |
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2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83372991094503238279 |