Study in Functional Organic Passivation on amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors
碩士 === 國立交通大學 === 顯示科技研究所 === 98 === The amorphous indium-gallium-zinc oxide (a-IGZO) channel thin-film transistor (TFTs) has high mobilites. However, the IGZO is not chemical stable in ambience; hence the passivation layer is essential for the devices long term stability. Thus the organic passivati...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2010
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/93430471186036103031 |