Study in Functional Organic Passivation on amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors

• Main Authors: Wu, Chi-Shian, 吳耆賢
• Other Authors: Shieh, Han-Ping
• Format: Others
• Language: en_US
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/93430471186036103031

碩士 === 國立交通大學 === 顯示科技研究所 === 98 === The amorphous indium-gallium-zinc oxide (a-IGZO) channel thin-film transistor (TFTs) has high mobilites. However, the IGZO is not chemical stable in ambience; hence the passivation layer is essential for the devices long term stability. Thus the organic passivation PTFMA and PMMA were proposed, due to their high material density (compare with other organic polymer) and hydrophobic feature. An a-IGZO with PTFMA shows a 2.3V threshold voltage (VTh) shift, another with PMMA shows VTh=6.4V shift, both devices revealed good stability in ambience; The sub-threshold swing (s.s.), VTh, and mobilities (μsat) changed only slightly. Finally, the functional color filter passivation layers were demonstrated, the colored passivation showed 49% National Television Systems Committee (NTSC) standard. In general, organic passivations provided a high potential passivation process for lowering deposition damage, functional color filter, printable, easy process, and lowering cost. These merits in organic passivation can also reduce the equipment and material costs.