Stabilization of Amorphous Indium-Gallium-Zinc Oxide Thin Film Transistors by a Passivation Layer
碩士 === 國立交通大學 === 顯示科技研究所 === 98 === The discovery of transparent oxides with high mobility realizes the transparent electronics and is being used for LCD backplane. The electrical instability of amorphous indium-gallium-zinc oxide (IGZO) thin film transistors is caused by two mechanisms：the interac...
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| Format: | Others |
| Language: | en_US |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01754003013392098373 |