Highly reflective Ag/La bilayer ohmic contacts on p-GaN
碩士 === 國立中央大學 === 材料科學與工程研究所 === 98 === GaN-based Light-emitting diode has great progress in recent years. In order to achieve the purpose of solid-state lighting, conventional LED which emit most light through the transparent conducting layer on the top of device could not satisfy this demand. Two...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/19167549261936432306 |