10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode
碩士 === 國立中央大學 === 電機工程研究所 === 98 === We demonstrate a novel type of planar InAlAs based separated absorption, transport, charge, and multiplication (SATCM), avalanche photodiode (APD) structure. By inserting an additional InP transport layer in the traditional InAlAs based SACM-APD structure, a str...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/95583585677569349624 |