10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode
碩士 === 國立中央大學 === 電機工程研究所 === 98 === We demonstrate a novel type of planar InAlAs based separated absorption, transport, charge, and multiplication (SATCM), avalanche photodiode (APD) structure. By inserting an additional InP transport layer in the traditional InAlAs based SACM-APD structure, a str...
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ndltd-TW-098NCU054421022016-04-20T04:18:02Z http://ndltd.ncl.edu.tw/handle/95583585677569349624 10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode 具有大面積且在高靈敏度、低暗電流操作下具有頻寬增強效應的10 Gbit/sec平面式 InAlAs 累增崩潰光二極體 Zheng-yao Wu 吳政耀 碩士 國立中央大學 電機工程研究所 98 We demonstrate a novel type of planar InAlAs based separated absorption, transport, charge, and multiplication (SATCM), avalanche photodiode (APD) structure. By inserting an additional InP transport layer in the traditional InAlAs based SACM-APD structure, a strong 3-dB bandwidth enhancement (BE) phenomenon under 0.9 breakdown voltage (0.9Vbr) operation has been observed, which greatly releases the trade-off between RC-limited bandwidth and secondary-hole transport time. Through the use of such phenomenon, we can thus increase the active diameter of our SATCM-APD from 30?m, which is the typical size of 10Gbit/sec APD, to around 50 or 40?m and sustain its capability for 10Gbit/sec high-speed operation with a great improvement in alignment tolerance. Furthermore, due to a thick depletion layer (~2.5?m) in our SATCM-APD structure, by properly optimizing the charge layer doping density, we can achieve a multiplication gain around 2 at punch-through voltage (~18V) with a 20V operation voltage window till breakdown occurs. Under 0.9Vbr (~39V) operation with BE phenomenon, a reasonable dark current (~50nA) and sensitivity (-23dBm) at 10Gbit/sec operation by use of our SATCM-APD with a 40 or 50?m active diameter has been successfully achieved. Jin-wei Shi 許晉瑋 2010 學位論文 ; thesis 85 zh-TW |
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碩士 === 國立中央大學 === 電機工程研究所 === 98 === We demonstrate a novel type of planar InAlAs based separated absorption, transport, charge, and multiplication (SATCM), avalanche photodiode (APD) structure. By inserting an additional InP transport layer in the traditional InAlAs based SACM-APD structure, a strong 3-dB bandwidth enhancement (BE) phenomenon under 0.9 breakdown voltage (0.9Vbr) operation has been observed, which greatly releases the trade-off between RC-limited bandwidth and secondary-hole transport time. Through the use of such phenomenon, we can thus increase the active diameter of our SATCM-APD from 30?m, which is the typical size of 10Gbit/sec APD, to around 50 or 40?m and sustain its capability for 10Gbit/sec high-speed operation with a great improvement in alignment tolerance.
Furthermore, due to a thick depletion layer (~2.5?m) in our SATCM-APD structure, by properly optimizing the charge layer doping density, we can achieve a multiplication gain around 2 at punch-through voltage (~18V) with a 20V operation voltage window till breakdown occurs. Under 0.9Vbr (~39V) operation with BE phenomenon, a reasonable dark current (~50nA) and sensitivity (-23dBm) at 10Gbit/sec operation by use of our SATCM-APD with a 40 or 50?m active diameter has been successfully achieved.
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author2 |
Jin-wei Shi |
author_facet |
Jin-wei Shi Zheng-yao Wu 吳政耀 |
author |
Zheng-yao Wu 吳政耀 |
spellingShingle |
Zheng-yao Wu 吳政耀 10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode |
author_sort |
Zheng-yao Wu |
title |
10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode |
title_short |
10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode |
title_full |
10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode |
title_fullStr |
10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode |
title_full_unstemmed |
10 Gbit/sec Planar InAlAs Avalanche Photodiodes with Large Active Area and Bandwidth Enhancement Effect under High-Sensitivity Operation Mode |
title_sort |
10 gbit/sec planar inalas avalanche photodiodes with large active area and bandwidth enhancement effect under high-sensitivity operation mode |
publishDate |
2010 |
url |
http://ndltd.ncl.edu.tw/handle/95583585677569349624 |
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