Fabrication and Characterization of Germanium Quantum Dots MOSFET with Electric-field Induced Tunable Tunnel Barriers in Si3N4/SiO2/Si3N4 Stack.
碩士 === 國立中央大學 === 電機工程研究所 === 98 === In this thesis, we explored two wide bandgap insulators, silicon-dioxide and silicon nitride, as a stacked dielectric for forming a tunable tunnel barrier under electric-field modulation. The so-formed tunnel dielectric behaves like a symmetric quasi-triangle pot...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61795455635890171587 |