Fabrication and Characterization of Germanium Quantum Dots MOSFET with Electric-field Induced Tunable Tunnel Barriers in Si3N4/SiO2/Si3N4 Stack.

碩士 === 國立中央大學 === 電機工程研究所 === 98 === In this thesis, we explored two wide bandgap insulators, silicon-dioxide and silicon nitride, as a stacked dielectric for forming a tunable tunnel barrier under electric-field modulation. The so-formed tunnel dielectric behaves like a symmetric quasi-triangle pot...

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Bibliographic Details
Main Authors: Yu-yuan Wang, 王裕淵
Other Authors: Pei-wen Li
Format: Others
Language:zh-TW
Published: 2010
Online Access:http://ndltd.ncl.edu.tw/handle/61795455635890171587

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