Simulation of Graphene Channel Field-Effect Transistors
碩士 === 國立彰化師範大學 === 電子工程學系 === 98 === We simulate and study the device structures and characteristics of the graphene –channel field-effect transistor (FET). In addition to the general device structure, we employ the MOSFET-like device structure, which has heavily doped semiconductor materials as th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2010
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51369644627498899886 |